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MOSFET 2N-CH 30V 0.8A SOT563

Product Attributes:

Series-
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Rds On (Max) @ Id, Vgs400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 15V
Power - Max490mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
GradeAutomotive
QualificationAEC-Q101
TT-DKEY-31-DMN3401LVQ-13TR-ND,31-DMN3401LVQ-13CT-ND,31-DMN3401LVQ-13DKR-ND
in stockINR 43.199999999999996
Diodes Incorporated
1 1
Diodes Incorporated 31-DMN3401LVQ-13TR-ND,31-DMN3401LVQ-13CT-ND,31-DMN3401LVQ-13DKR-ND

Diodes Incorporated 31-DMN3401LVQ-13TR-ND,31-DMN3401LVQ-13CT-ND,31-DMN3401LVQ-13DKR-ND

Sku: TT-DKEY-31-DMN3401LVQ-13TR-ND,31-DMN3401LVQ-13CT-ND,31-DMN3401LVQ-13DKR-ND
₹43.2


Sold By: tenettech
Features
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Description of product

MOSFET 2N-CH 30V 0.8A SOT563

Product Attributes:

Series-
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Rds On (Max) @ Id, Vgs400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 15V
Power - Max490mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
GradeAutomotive
QualificationAEC-Q101