ROHM Semiconductor RFUH25NS3S Fast Recovery Diode features ultra-low switching loss and high current overload capacity. This recovery diode includes silicon epitaxial planar type construction. The RFUH25NS3S recovery diode offers 350V repetitive peak reverse voltage, 10μA reverse current, and 100A forward current surge peak. This recovery diode operates at 1.45V maximum forward voltage and stored at -55°C to 150°C temperature range. The RFUH25NS3S super fast recovery diode is ideal for use in general rectification.
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