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# 2514/U, 7th 'A' Main Road, Opp. to BBMP Swimming Pool, Hampinagar, Vijayanagar 2nd Stage. Bangalore, IN
+918023404924 //cdn.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/ms.settings/5256837ccc4abf1d39000001/webp/59dafe26aef6e1d20402c4c3-480x480.png" info@tenettech.com
6017c29ed205c76307ca7e82 2N7000 N-Channel Enhancement FET //cdn.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/6018e316e879d04478ceac06/webp/ec-trans-p.jpg

2N7000 TMOS FET N-Channel Transistor

Feature & Specification
  • Drain-Source Volt (Vds): 60V
  • Drain-Gate Volt (Vdg): 60V
  • Gate-Source Volt (Vgs): ±20V
  • Drain Current (Id): 0.2A
  • Power Dissipation (Ptot): 350mW
  • Type: N-Channel
* Image shown is a representation only.
TT-ECK-4865
in stock INR 12.98
ELECTRON COMPONENT
1 1

2N7000 N-Channel Enhancement FET

Sku: TT-ECK-4865
₹12.98


Sold By: tenettech
Features
  • Shipping in 10-12 Working days

Description of product

2N7000 TMOS FET N-Channel Transistor

Feature & Specification
  • Drain-Source Volt (Vds): 60V
  • Drain-Gate Volt (Vdg): 60V
  • Gate-Source Volt (Vgs): ±20V
  • Drain Current (Id): 0.2A
  • Power Dissipation (Ptot): 350mW
  • Type: N-Channel
* Image shown is a representation only.