ON Semiconductor FGY75T95LQDT and FGY75T95SQDT Trench IGBTs are 4th Generation Trench Field Stop Insulated Gate Bipolar Transistors, co-packaged with a full current-rated diode. Both devices offer fast switching, tight parameter distribution, and high current capability. The FGY75T95LQDT also offers an exceptionally low 1.31V Saturation Voltage (VCE(Sat)). The FGY75T95LQDT and FGY75T95SQDT Trench IGBTs are offered in TO-247-3L packages, and are Pb-free and RoHS compliant.
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