Infineon Technologies IPG20N06S4L26ATMA1TR-ND,IPG20N06S4L26ATMA1CT-ND,IPG20N06S4L26ATMA1DKR-ND
Sku: TT-DKEY-IPG20N06S4L26ATMA1TR-ND,IPG20N06S4L26ATMA1CT-ND,IPG20N06S4L26ATMA1DKR-ND
₹159.84
Features
- Shipping in 10-12 Working Days
Description of product
MOSFET 2N-CH 60V 20A 8TDSON
Product Attributes:
| Series | OptiMOS™ |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430pF @ 25V |
| Power - Max | 33W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
| Grade | - |
| Qualification | - |
