SHOP FOR
http://base-store.storehippo.com/
# 2514/U, 7th 'A' Main Road, Opp. to BBMP Swimming Pool, Hampinagar, Vijayanagar 2nd Stage. 560104 Bangalore IN
Tenettech E-Store
# 2514/U, 7th 'A' Main Road, Opp. to BBMP Swimming Pool, Hampinagar, Vijayanagar 2nd Stage. Bangalore, IN
+918023404924 https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/ms.settings/5256837ccc4abf1d39000001/webp/59dafe26aef6e1d20402c4c3-480x480.png" info@tenettech.com
6017bf15d205c76307c9c361 IRF9640 (MOSFET P Channel Transistor) [Original IRF] https://cdn1.storehippo.com/s/59c9e4669bd3e7c70c5f5e6c/6017bf15d205c76307c9c363/webp/ec-mosfet-transistor.jpg

IRF9640 (Hexfet Power Mosfet)

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Specifications

  • Drain-Source Volt (Vds): -200V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): -11A
  • Power Dissipation (Ptot): 125W
  • Type: P-Channel


Feature
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated
 
* Image shown is a representation only.
 TT-ECK-2908
in stock INR 44.84
ELECTRON COMPONENT
1 1
ec-mosfet-transistor-1000x1000.jpg

IRF9640 (MOSFET P Channel Transistor) [Original IRF]

Sku: TT-ECK-2908
Be the first to review this product
₹44.84
Add to Cart Buy Now
Sold By: tenettech
Features
  • Shipping in 10-12 Working days

Description of product

IRF9640 (Hexfet Power Mosfet)

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Specifications

  • Drain-Source Volt (Vds): -200V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): -11A
  • Power Dissipation (Ptot): 125W
  • Type: P-Channel


Feature
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated
 
* Image shown is a representation only.

Related products