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6017bf15d205c76307c9c361 IRF9640 (MOSFET P Channel Transistor) [Original IRF] //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/6017bf15d205c76307c9c363/webp/ec-mosfet-transistor.jpg

IRF9640 (Hexfet Power Mosfet)

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Specifications

  • Drain-Source Volt (Vds): -200V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): -11A
  • Power Dissipation (Ptot): 125W
  • Type: P-Channel


Feature
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated
 
* Image shown is a representation only.
 TT-ECK-2908
in stock INR 44.84
ELECTRON COMPONENT
1 1
ec-mosfet-transistor-1000x1000.jpg

IRF9640 (MOSFET P Channel Transistor) [Original IRF]

Sku: TT-ECK-2908
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₹44.84
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Description of product

IRF9640 (Hexfet Power Mosfet)

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Specifications

  • Drain-Source Volt (Vds): -200V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): -11A
  • Power Dissipation (Ptot): 125W
  • Type: P-Channel


Feature
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated
 
* Image shown is a representation only.

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