MOSFET 650V 80 mOhm SiC CASCODE FAST, G3, TO-247-3L

Sku: TT-MU-431-UF3C065080K3S

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Description of product


United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized Si MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge and are excellent for switching inductive loads, and any application requiring a standard gate drive. They are available in 650V and 1200V versions and come in TO-247-3L, TO-247-4L, and D2PAK-3L packages.