Toshiba π-MOS VIII MOSFETs are 10V Gate Drive, single N-channel devices, based on the Toshiba eighth generation planar semiconductor process, which combines high levels of cell integration with optimised cell design. The technology supports reduced gate charge and capacitance compared to prior generations, without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through hole form factor, and in a surface mounted DPAK package.
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