Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the R_DS(on) it makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.