Toshiba MOSV MOSFETs are N-channel MOSFETs offered in Logic-Level Gate Drive and Low Voltage Gate Drive variants. These devices provide a Drain-Source Breakdown Voltage (VDS) range from 50V to 60V, and a Gate-Source Voltage (VGS) range from 4V to 20V. These devices are offered in UFM, UF6, TSOP6F, and SOT-23F packages for design flexibility.
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