MOSFET Small Signal MOSFET N-ch VDSS=60V, VGSS=+/-20V, ID=2.0A, RDS(ON)=0.44Ohm @ 4V, in UF6 package

Sku: TT-MU-757-SSM6K407TULF

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Description of product


Toshiba MOSV MOSFETs are N-channel MOSFETs offered in Logic-Level Gate Drive and Low Voltage Gate Drive variants. These devices provide a Drain-Source Breakdown Voltage (VDS) range from 50V to 60V, and a Gate-Source Voltage (VGS) range from 4V to 20V. These devices are offered in UFM, UF6, TSOP6F, and SOT-23F packages for design flexibility.