Toshiba π-MOS IX Planar Power MOSFETs offer high efficiency and low noise in a compact TO-220SIS package. π-MOS IX Series MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX series provides 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same level of efficiency. These N-channel Power MOSFETs offer greater design flexibility, reducing design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.
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