Wolfspeed / Cree GTVA High-Power RF GaN on SiC HEMT are 50V high-electron-mobility transistors (HEMT) based on gallium-nitride on silicon carbide technology. GaN on SiC devices offer high power density coupled with a high breakdown voltage, enabling highly efficient power amplifiers. The GTVA High-Power RF GaN on SiC HEMT feature input matching, high efficiency, and thermally-enhanced packages. These pulsed/CW (continuous-wave) devices have a pulse width of 128µs and a duty cycle of 10%.
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