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6018f4f5b2f6d571c6c3a6b0 60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original] //d2pyicwmjx3wii.cloudfront.net/s/59c9e4669bd3e7c70c5f5e6c/6018f4f5b2f6d571c6c3a6b2/webp/to-220f.jpg

60R580P / MMFT60R580P mosfet 600v

MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE
 
The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance throughout the industry.
 
Feature
  • Advanced Process Technology
  • 175°C Operating Temperature
  • Fast Switching
  • N-Channel
  • Fully Avalanche Rated
Specification
  • Type Designator: MMIS60R580P
  • Marking Code: 60R580P
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 70 W
  • Maximum Drain-Source Voltage |Vds|: 600 V
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Maximum Drain Current |Id|: 8 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): 34 nS
  • Drain-Source Capacitance (Cd): 428 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Pins : 1. GATE 2. DRAIN 3. SOURCE

 
* Image shown is a representation only.
 TT-ECK-5413
in stock INR 125.08
ELECTRON COMPONENT
1 1
to-220f-1000x1000.jpg

60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]

Sku: TT-ECK-5413
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₹125.08
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Features
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Description of product

60R580P / MMFT60R580P mosfet 600v

MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE
 
The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance throughout the industry.
 
Feature
  • Advanced Process Technology
  • 175°C Operating Temperature
  • Fast Switching
  • N-Channel
  • Fully Avalanche Rated
Specification
  • Type Designator: MMIS60R580P
  • Marking Code: 60R580P
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 70 W
  • Maximum Drain-Source Voltage |Vds|: 600 V
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Maximum Drain Current |Id|: 8 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): 34 nS
  • Drain-Source Capacitance (Cd): 428 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Pins : 1. GATE 2. DRAIN 3. SOURCE

 
* Image shown is a representation only.

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