http://base-store.storehippo.com/
# 2514/U, 7th 'A' Main Road, Opp. to BBMP Swimming Pool, Hampinagar, Vijayanagar 2nd Stage.
560104
Bangalore
IN
Tenettech E-Store
http://base-store.storehippo.com/
# 2514/U, 7th 'A' Main Road, Opp. to BBMP Swimming Pool, Hampinagar, Vijayanagar 2nd Stage.
Bangalore,
IN
+918023404924
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[email protected]
6018f4f5b2f6d571c6c3a6b0
60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]
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60R580P / MMFT60R580P mosfet 600v
MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE
The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance throughout the industry.
Feature
-
Advanced Process Technology
- 175°C Operating Temperature
-
Fast Switching
- N-Channel
-
Fully Avalanche Rated
Specification
- Type Designator: MMIS60R580P
- Marking Code: 60R580P
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 70 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 8 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 34 nS
- Drain-Source Capacitance (Cd): 428 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm
Pins : 1. GATE 2. DRAIN 3. SOURCE
* Image shown is a representation only.
TT-ECK-5413
in stock
INR
125.08
ELECTRON COMPONENT
1
1