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669a481e9ad8aa6532e5041d Infineon Technologies 448-BSG0810NDIATMA1TR-ND,448-BSG0810NDIATMA1CT-ND,448-BSG0810NDIATMA1DKR-ND https://www.componentstores.com/s/59c9e4669bd3e7c70c5f5e6c/669a48209ad8aa6532e50441/448percent3b-ppercent5epg-tison-8percent3b-percent3b-8.jpg

MOSFET 2N-CH 25V 19A/39A TISON8

Product Attributes:

Series OptiMOS™
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 39A
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12V
Power - Max 2.5W
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TISON-8
Grade -
Qualification -
TT-DKEY-448-BSG0810NDIATMA1TR-ND,448-BSG0810NDIATMA1CT-ND,448-BSG0810NDIATMA1DKR-ND
in stock INR 368.64
Infineon Technologies
1 1

Infineon Technologies 448-BSG0810NDIATMA1TR-ND,448-BSG0810NDIATMA1CT-ND,448-BSG0810NDIATMA1DKR-ND

Sku: TT-DKEY-448-BSG0810NDIATMA1TR-ND,448-BSG0810NDIATMA1CT-ND,448-BSG0810NDIATMA1DKR-ND
₹368.64


Sold By: tenettech
Features
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Description of product

MOSFET 2N-CH 25V 19A/39A TISON8

Product Attributes:

Series OptiMOS™
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 39A
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12V
Power - Max 2.5W
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TISON-8
Grade -
Qualification -