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669a477fc41260b0ca7fca21 onsemi 5556-NXH003P120M3F2PTHG-ND https://www.componentstores.com/s/59c9e4669bd3e7c70c5f5e6c/669a4780c41260b0ca7fca4b/mfg_nxh00xp120m3f2pthg.jpg

ELITESIC, 3 MOHM SIC M3S MOSFET,

Product Attributes:

Series -
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 350A (Tc)
Rds On (Max) @ Id, Vgs 5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id 4.4V @ 160mA
Gate Charge (Qg) (Max) @ Vgs 1195nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 20889pF @ 800V
Power - Max 979W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 36-PIM (56.7x62.8)
Grade -
Qualification -
TT-DKEY-5556-NXH003P120M3F2PTHG-ND
in stock INR 32307.84
onsemi
1 1

onsemi 5556-NXH003P120M3F2PTHG-ND

Sku: TT-DKEY-5556-NXH003P120M3F2PTHG-ND
₹32,307.84


Sold By: tenettech
Features
  • Shipping in 10-12 Working Days

Description of product

ELITESIC, 3 MOHM SIC M3S MOSFET,

Product Attributes:

Series -
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 350A (Tc)
Rds On (Max) @ Id, Vgs 5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id 4.4V @ 160mA
Gate Charge (Qg) (Max) @ Vgs 1195nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 20889pF @ 800V
Power - Max 979W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 36-PIM (56.7x62.8)
Grade -
Qualification -