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MOSFET 2P-CH 40V 8A 8SOIC

Product Attributes:

Series TrenchFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 27mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 20V
Power - Max 3.2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Grade -
Qualification -
TT-DKEY-SI4909DY-T1-GE3TR-ND,SI4909DY-T1-GE3CT-ND,SI4909DY-T1-GE3DKR-ND
in stock INR 144
Vishay Siliconix
1 1

Vishay Siliconix SI4909DY-T1-GE3TR-ND,SI4909DY-T1-GE3CT-ND,SI4909DY-T1-GE3DKR-ND

Sku: TT-DKEY-SI4909DY-T1-GE3TR-ND,SI4909DY-T1-GE3CT-ND,SI4909DY-T1-GE3DKR-ND
₹144


Sold By: tenettech
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Description of product

MOSFET 2P-CH 40V 8A 8SOIC

Product Attributes:

Series TrenchFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 27mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 20V
Power - Max 3.2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Grade -
Qualification -