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669a481bc3e57eec395af5f2 Vishay Siliconix SI7997DP-T1-GE3TR-ND,SI7997DP-T1-GE3CT-ND,SI7997DP-T1-GE3DKR-ND https://www.componentstores.com/s/59c9e4669bd3e7c70c5f5e6c/669a481cc3e57eec395af676/so-8percent20dualpercent20pad.jpg

MOSFET 2P-CH 30V 60A PPAK SO8

Product Attributes:

Series TrenchFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 60A
Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 15V
Power - Max 46W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Grade -
Qualification -
TT-DKEY-SI7997DP-T1-GE3TR-ND,SI7997DP-T1-GE3CT-ND,SI7997DP-T1-GE3DKR-ND
in stock INR 305.28000000000003
Vishay Siliconix
1 1

Vishay Siliconix SI7997DP-T1-GE3TR-ND,SI7997DP-T1-GE3CT-ND,SI7997DP-T1-GE3DKR-ND

Sku: TT-DKEY-SI7997DP-T1-GE3TR-ND,SI7997DP-T1-GE3CT-ND,SI7997DP-T1-GE3DKR-ND
₹305.28


Sold By: tenettech
Features
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Description of product

MOSFET 2P-CH 30V 60A PPAK SO8

Product Attributes:

Series TrenchFET®
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 60A
Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 15V
Power - Max 46W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Grade -
Qualification -